Intel and Micron sample 20nm NAND flash memory

Intel and Micron have introduced a 20-nanometer (nm) process technology for manufacturing NAND flash memory.

The new process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, which provides a high-capacity, small form factor storage option.

According to Intel exec Tom Rampone, the next-gen NAND flash will be integrated into a wide range of mobile devices, including smartphones, tablets and SSDs.

“The 20nm, 8GB device measures just 118mm2 and enables a 30 to 40 percent reduction in board space (depending on package type) compared to existing 25nm 8GB NAND device,” he explained.

“A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.”

The 20nm, 8GB device is currently sampling and is expected to enter mass production in the second half of 2011.

Intel and Micron also remain on track to unveil samples of a 16GB device (in the second half of 2011), creating up to 128GBs of capacity in a single solid-state storage platform smaller than a U.S. postage stamp.