Intel and Micron have debuted a 128 gigabit (Gb), multilevel-cell (MLC) chip.
The new 20nm monolithic 128Gb NAND is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die.
The device provides twice the storage capacity and performance of existing 20nm 64Gb NAND, all while achieving speeds of 333 megatransfers per second (MT/s).
The new NAND is slated for use in next-gen tablets, smartphones and high-capacity solid-state drives (SSDs.)
Micron VP Glen Hawk noted the above-mentioned 20nm process technology employs a new cell structure that enables more aggressive cell scaling compared to conventional architectures.
Indeed, the 20nm NAND exploits a planar cell structure to overcome the inherent difficulties associated with advanced process technology – enabling performance and reliability on par with the previous generation.
Essentially, says Hawk, the planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.
Intel and Micron are currently kicking off a December production ramp of their 20nm 64Gb NAND flash product that will enable a rapid transition to the 128Gb device in 2012. Samples of the 128Gb device are expected to be available in January, closely followed by mass production in the first half of 2012.
