IBM develops dense, fast, 32 nanometer DRAM

IBM Microelectronics said that it has successfully created what it claims is the smallest, densest and fastest on chip DRAM device.

The device is built using a 32 nanometer process and uses silicon-on-insulator (SOI) technology. IBM believes it will give a 30 percent improvement on chip performance and 40 percent lower power consumption.

The test chip it’s created is comparable to an SRAM module produced using 15 nanometer technology, it claims. The eDRAM (embedded DRAM) cell is twice as dense as any announced 22 nanometer embedded SRAM cell, and four times as dense as any comparable 32 nanometer embedded SRAM.

The device has latency and cycle times of less than two nanoseconds and uses four times less standby power.

IBM will offer the technology to foundry customers and will also use the technology in its own servers.  ARM is developing design libraries for the technology which will give it early access to the process.

The device will be shown at the International Electron Devices meeting in December.