Deprecated: implode(): Passing glue string after array is deprecated. Swap the parameters in /var/www/tgdaily.com/wp-content/plugins/cp-link-nofollow/includes/CP_LNF_Post_Type.php on line 172
A team of Taiwanese researchers led by Edward-Yi Chang, a professor from the Nationa Chiao Tung University, has managed to build a new type of high electron mobility transistor (HEMT) with the highest oscillation frequency ever.
The device could be manufactured at 40nm and it is hoped that it could be applied in imaging systems, aerospace and biomedical fields. In other words, it won’t show up in smartphones. The transistor is capable of hitting a frequency of 710GHz, which is so high that it could almost be converted to light.
The new transistor could decrease the total power consumption of consumer and communications gear, improve image resolution in remote atmospheric testing and space exploration applications, reports Focus Taiwan.
The team is already working with Panasonic and US aerospace companies to apply the new HEMT to actual devices.