Close

Hynix announces development of 2 Gb mobile DRAM

Share on facebook
Share on twitter
Share on linkedin
Share on whatsapp
Hynix announces development of 2 Gb mobile DRAM

Hynix Semiconductor announced it has developed 2Gb mobile DRAM chips using 54nm process technology. The new Hynix 2Gb mobile DRAM boasts maximum operating speed of 400Mbps at 1.2V power supply and processes up to 1.6 gigabytes per second with a 32-bit I/O.

More here at Digitimes.

Author