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Graphene-based memory eyed by researchers to replace flash

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Graphene-based memory eyed by researchers to replace flash

Houston (TX) – A research team at Rice University led by James Tour with Yubao Li and Alexander Sinitskii have discovered that memory cells created by graphene (thin sheets of graphite) can be 5x as dense while requiring significantly less power to operate. In addition, the lab has already experimented with up to 20K cycles and there was “no discernable degradation.”

The memory itself has been created with individual bit cells of less than 10nm, compared to 45nm in today’s flash memory chips. The bits are also controlled by only two terminals instead of three – as is used today. This not only allows for less complex designs, but researchers also claim it could be stackable in three dimensions.

The memory also operates over a wide range of temperatures. The team has tested it from -75 degrees Celsius to over 200 degrees Celsius with no discernable effects in performance or storage. This would allow graphene-based memory solutions to work directly alongside hot environments, such as on the CPU core itself.

And perhaps the biggest benefit of all, the researchers have discovered that this form of memory is impervious to radiation, making it suitable for use in extreme environments like spacecraft and nuclear devices.

Read more at Rice University.