Close

Hynix and Grandis sign license and joint development agreement on spin-transfer torque MRAM

Share on facebook
Share on twitter
Share on linkedin
Share on whatsapp
Hynix and Grandis sign license and joint development agreement on spin-transfer torque MRAM

Hynix Semiconductor and Grandis announced that they have signed a long-term license agreement for memory products incorporating Grandis’ patents and intellectual property in spin-transfer torque random access memory (STT-RAM). The two companies have also entered into a collaborative agreement to jointly integrate Grandis’ fundamental STT-RAM technology into Hynix’s future memory products.

More here at Digitimes.

Author