IBM and Hitachi have signed an agreement to work together on analyzing semiconductor devices and structures to get a better understanding of transistor variation and device physics. The joint research effort will be conducted at IBM’s Thomas J. Watson Research Center in Yorktown Heights, N.Y. and at the College of Nanoscale Science and Engineering’s Albany NanoTech Complex. The focus will be on semiconductors manufactured in 32 nm and smaller.
IBM and Hitachi said they intend to investigate the possibilities for even further transistor scaling. It is the first time the two companies are collaborating on semiconductor technology research.