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Samsung increases DRAM output on 0.11-micron node

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Samsung increases DRAM output on 0.11-micron node

Samsung Electronics has increased its DRAM output that is using a 0.11-micron process at its 8″ fabs to meet growing demand, as it still has issues at its 80nm node, according to market sources. DRAM produced using the 0.11-micron process will be named D-generation products, while 80nm-made products are called E-generation DRAM, the sources said.

More here at DigiTimes.

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