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Toshiba and SanDisk to build 12" fab in Japan to expand NAND flash capacity

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Toshiba and SanDisk to build 12" fab in Japan to expand NAND flash capacity

Toshiba and SanDisk on April 5 announced that they have agreed to build a new 300-millimeter (mm) wafer fabrication facility at Toshiba’s Yokkaichi Operations to meet growing demand for NAND flash memory.

The companies plan to start construction of the new facility in August 2006, with initial production operations scheduled to begin in the fourth quarter of calendar year 2007.

More here at DigiTimes.

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