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Samsung shifts memory capacity from NAND flash to DDR2

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Samsung shifts memory capacity from NAND flash to DDR2

After shifting part of its DDR2 capacity to NAND flash at the end of last year, Samsung Electronics moved 20,000 to 30,000 wafers of NAND flash capacity back to DDR2 memory prior to Chinese New Year, with the move expected to start influencing the memory market from April, according to many downstream sources. The decision was not caused by a change in the market outlook for DRAM and NAND flash.

More here at DigiTimes.

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