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More Intel marketing roadmap

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More Intel marketing roadmap

Infineon Technologies AG and Toshiba Corp. will split a $60 million bill they expect to pay for the development of a new ferroelectric non-volatile memory technology. Ferroelectric RAM (FeRAM) requires less voltage than DRAM and SRAM technologies with the advantage of maintaining information without applied power, cutting battery requirements for mobile devices. The technology is scheduled for 2002 use, but will not displace MRAM technologies that are not expected to reach market for several more years.

For more information, read idg.net and news.excite.com.

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