Samsung Electronics Co. Ltd. has produced a prototype DDR SDRAM chip with four times more transistors than any previous DRAM memory chip. The 4 billion transistor, 1.8V DDR DRAM is reportedly the first use of full density 0.10 micron design technology. Nevertheless, the chip is huge at 1 square inch or 645 square millimeters. Commercial production of the chip is, according to the company, at least three or four years away.
Read the source article at electronicnews.com.